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| SEMICONDUCTOR TECHNICAL DATA FEATURE Low Collector-Emitter Saturation Voltage VCE(sat). High Collector Current Capability : IC and ICP. Higher Efficiency Leading to Less Heat Generation. B KTC3572 EPITAXIAL PLANAR NPN TRANSISTOR D DIM A B C D E F G H J K L M H N O P Q R S MILLIMETERS 7.20 MAX 5.20 MAX 0.60 MAX 2.50 MAX 1.15 MAX 1.27 1.70 MAX 0.55 MAX _ 14.00 + 0.50 0.35 MIN _ 0.75 + 0.10 4 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 120 100 5 1 3 300 1 150 -55 150 UNIT V V V A O F H M C Q P DEPTH:0.2 A S K J F H E M 3 N L D R G mA W 1 N 2 H 25 1.25 1.50 0.10 MAX _ 12.50 + 0.50 1.00 1. EMITTER 2. COLLECTOR 3. BASE TO-92L ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage ** Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current ) TEST CONDITION IC=100 A IC=1mA IE=100 A VCB=80V VEB=4V, IC=0A VCES=80V, VBE=0V IC=100mA, IB=10mA IC=500mA, IB=50mA IC=1A, IB=100mA IC=1A, IB=100mA VCE=10V, IC=1A VCE=10V, IC=1mA VCE=10V, IC=250mA VCE=10V, IC=500mA VCE=10V, IC=1A VCE=10V, IC=50mA, f=100MHz VCB=10V, f=1MHz MIN. 120 100 5 150 150 100 80 100 TYP. 9.5 MAX. 100 100 100 0.04 0.12 0.2 1.05 0.9 500 MHz pF V V V UNIT V V V nA nA nA SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) (1) VCE(sat) (2) VCE(sat) (3) VBE(sat) VBE hFE(1) hFE(2) hFE(3) hFE(4) fT Cob Collector-Emitter Saturation Voltage ** Base-Emitter Saturation Voltage ** Base-Emitter Voltag DC Current Gain ** Transition Frequency Collector Output Capacitance ** Pulse Width = 300 S, Duty Cycle 2%. 2010. 6. 4 Revision No : 0 1/3 KTC3572 VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 IC/IB=10 VCE(sat) - I C 10 IC/IB=50 Ta=25 C Ta=100 C 1 10-1 Ta=25 C Ta=-55 C 10-1 10-2 10-1 1 10 102 103 104 10-2 10-1 1 10 102 103 104 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) VBE - I C BASE-EMITTER VOLTAGE VBE (V) 1.2 VCE=10V h FE - I C 600 DC CURRENT GAIN h FE VCE=10V 0.8 Ta=-55 C Ta=25 C 400 Ta=100 C Ta=25 C 0.4 Ta=100 C 200 Ta=-55 C 0 -10-1 -1 -10 -102 -103 -104 0 -10-1 -1 -10 -102 -103 -104 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) VBE(sat) - I C 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) IC/IB=20 Ta=25 C I C - VCE IB=3150A IB=3500A IB=2800A 1.6 IB=2450A Ta=25 C 2 COLLECTOR CURRENT IC (A) 1.2 0.8 0.4 0 IB=2100A IB=1750A IB=1400A IB=1050A IB=700A IB=350A 1 10-1 10-1 1 10 102 103 104 0 1 2 3 4 5 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) 2010. 6. 4 Revision No : 0 2/3 KTC3572 SAFE OPERATING AREA COLLECTOR CURRENT I C (mA) 10 IC MAX(PULSE)* 1 IC MAX(CONTINUOUS) 100mS 10mS* 1mS* 0.1 DC OPERATION(Ta=25 C) 0.01 *SINGLE NONREPETTTTVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0.001 0.1 1 10 100 1000 COLLECTOR-EMITTER VOLTAGE VCE (V) 2010. 6. 4 Revision No : 0 3/3 |
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